Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device
US7905958B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Jun 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.