Method and apparatus for photomask plasma etching
US7909961B2 · kind B2 · utility
17Cited by
46References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2006 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Mar 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32422
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for etching photomasks are provided herein. The apparatus includes a process chamber with a shield above a substrate support. The shield comprises a plate with apertures, and the plate has two zones with at least one characteristic, such as material or potential bias, that is different from each other. The method provides for etching a photomask substrate with a distribution of ions and neutral species that pass through the shield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.