Multi-station deposition apparatus and method
US7923069B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2010 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Aug 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6719
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.