Pulsed laser anneal system architecture
US7923660B2 · kind B2 · utility
0Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2007 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Feb 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67748
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is the method and apparatus for annealing semiconductor substrates. One embodiment provides a semiconductor processing chamber comprising a first substrate support configured to support a substrate, a second substrate support configured to support a substrate, a shuttle coupled to the first substrate support and configured to move the first substrate support between a processing zone and a first loading zone, wherein the processing zone having a processing volume configured to alternately accommodating the first substrate support and the second substrate support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.