Phase change memory element with a peripheral connection to a thin film electrode

US7923712B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John C. Arnold · North Chatham, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Timothy J. Dalton · Ridgefield, US
• Michael C. Gaidis · Yorktown Heights, US
• Louis L. Hsu · Fishkill, US
• Carl Radens · Lagrangeville, US
• Keith Kwong Hon Wong · Wappingers Falls, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Jun 26, 2009
• Grant date: Apr 12, 2011
• Expiry date: Jun 26, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.