Semiconductor structure including mixed rare earth oxide formed on silicon
US7923743B2 · kind B2 · utility
7Cited by
34References
7Claims
0Family size
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Key dates
| Filing date | Nov 18, 2009 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Nov 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02293
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.