Methods for depositing high-K dielectrics
US7927947B2 · kind B2 · utility
5Cited by
3References
20Claims
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Key dates
| Filing date | Jun 30, 2009 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Sep 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.