Nano imprint technique with increased flexibility with respect to alignment and feature shaping
US7928004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2007 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | May 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.