Method for forming narrow structures in a semiconductor device
US7928005B2 · kind B2 · utility
3Cited by
5References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 27, 2005 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Sep 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming multiple conductive structures in a semiconductor device includes forming spacers adjacent side surfaces of a mask, where the mask and the spacers are formed on a conductive layer. The method also includes etching at least one trench in a portion of the conductive layer not covered by the spacers or the mask. The method may further include depositing a material over the semiconductor device, removing the mask and etching the conductive layer to remove portions of the conductive layer not covered by the spacers or the material, where remaining portions of the conductive layer form the conductive structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.