Field effect transistor having a stressed contact etch stop layer with reduced conformality

US7932166B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Kai Frohberg · Meißen, DE
• Frank Feustel · Dresden, DE
• Thomas Werner · Radebeul, DE

Key dates

• Filing date: Mar 29, 2007
• Grant date: Apr 26, 2011
• Expiry date: Dec 26, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By forming a highly non-conformal stressed overlayer, such as a contact etch stop layer, the efficiency of the stress transfer into the respective channel region of a field effect transistor may be significantly increased. For instance, non-conformal PECVD techniques may be used for forming highly stressed silicon nitride in a non-conformal manner, thereby achieving higher transistor performance for otherwise identical stress conditions.