Process of forming an electronic device including a layer of discontinuous storage elements

US7932189B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Tushar P. Merchant · Austin, US
• Chun-Li Liu · Scottsdale, US
• Ramachandran Muralidhar · Austin, US
• Marius Orlowski · Meylan, FR
• Rajesh A. Rao · Austin, US
• Matthew W. Stoker · Poughkeepsie, US

Key dates

• Filing date: Jan 26, 2007
• Grant date: Apr 26, 2011
• Expiry date: Oct 1, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/943
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An electronic device can include a layer of discontinuous storage elements. A dielectric layer overlying the discontinuous storage elements can be substantially hydrogen-free. A process of forming the electronic device can include forming a layer including silicon over the discontinuous storage elements. In one embodiment, the process includes oxidizing at least substantially all of the layer. In another embodiment, the process includes forming the layer using a substantially hydrogen-free silicon precursor material and oxidizing at least substantially all of the layer.