Method of patterning a layer using a pellicle
US7935547B2 · kind B2 · utility
1Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2006 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Nov 14, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for patterning a layer on a semiconductor substrate includes forming a layer of a semiconductor substrate and exposing the layer to light. The light travels through a second pellicle that is manufactured by a method that includes determining a first transmission of a first light through a first pellicle, wherein the first light is normal to the first pellicle, determining a second transmission of a second light through the first pellicle, wherein the second light is not normal to the first pellicle, and modifying the first pellicle to form a second pellicle using the first and second transmission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.