Semiconductor device with backfilled isolation

US7936006B1 · kind B1 · utility

Assignee

• XILINX, INC. · US

Inventors

• Yuhao Luo · San Jose, US
• Deepak Nayak · Kanchinakote, IN
• Daniel Gitlin · Palo Alto, US

Key dates

• Filing date: Oct 6, 2005
• Grant date: May 3, 2011
• Expiry date: Nov 12, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D87/00

Abstract

An MOS device has an embedded dielectric structure underlying an active portion of the device, such as a source extension or a drain extension. In an alternative embodiment, an embedded dielectric structure underlies the channel region of a MOS device, as well as the source and drain extensions.