Dynamic inline yield analysis and prediction of a defect limited yield using inline inspection defects
US7937179B2 · kind B2 · utility
15Cited by
17References
19Claims
0Family size
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Key dates
| Filing date | May 22, 2008 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Mar 3, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method for predicting yield includes calculating a criticality factor (CF) for each of a plurality of defects detected in an inspection process step of a wafer, and determining a yield-loss contribution of the inspection process step to the final yield based on CFs of the plurality of defects and the yield model built for a relevant design. The yield-loss contribution of the inspection process step is then used to predict the final yield for the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.