Methods for making substrates and substrates formed therefrom

US7939428B2 · kind B2 · utility

Assignee

• S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR

Inventors

• Alice Boussagol · Brignoud, FR
• Bruce Faure · Grenoble, FR
• Bruno Ghyselen · La Tour sans Venin, FR
• Fabrice Letertre · Grenoble, FR
• Olivier Rayssac · Grenoble, FR

Key dates

• Filing date: Oct 28, 2010
• Grant date: May 10, 2011
• Expiry date: Oct 28, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2007
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.