Method and apparatus for photomask plasma etching
US7943005B2 · kind B2 · utility
10Cited by
45References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2006 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Feb 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.