Patent · US Active

Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacer

US7943462B1 · kind B1 · utility

12Cited by

1References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Sven Beyer · Dresden, DE
Thilo Scheiper · Dresden, DE
Jan Hoentschel · Dresden, DE
Markus Lenski · Dresden, DE

Key dates

Filing date	Sep 30, 2010
Grant date	May 17, 2011
Priority date	—
Expiry date	Sep 30, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0227
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage, the dielectric cap layer of the gate electrode structures may be efficiently removed on the basis of a carbon spacer element, which may thus preserve the integrity of the silicon nitride spacer structure. Thereafter, the sacrificial carbon spacer may be removed substantially without affecting other device areas, such as isolation structures, active regions and the like, which may contribute to superior process conditions during the further processing of the semiconductor device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.