Nano-tube MOSFET technology and devices

US7943989B2 · kind B2 · utility

Assignee

• Alpha and Omega Semiconductor, Ltd. · US

Inventors

• Hamza Yilmaz · Saratoga, US
• Daniel Ng · Campbell, US
• Lingpeng Guan · Santa Clara, US
• Anup Bhalla · Santa Clara, US
• Wilson Ma · Sunnyvale, US
• Moses Ho · Campbell, US
• John Chen · Palo Alto, US

Key dates

• Filing date: Dec 31, 2008
• Grant date: May 17, 2011
• Expiry date: Dec 31, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/112

Abstract

This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each of the trenches is filled with a plurality of epitaxial layers of alternating conductivity types constituting nano tubes functioning as conducting channels stacked as layers extending along a sidewall direction with a “Gap Filler” layer filling a merging-gap between the nano tubes disposed substantially at a center of each of the trenches. The “Gap Filler” layer can be very lightly doped Silicon or grown and deposited dielectric layer. In an exemplary embodiment, the plurality of trenches are separated by pillar columns each having a width approximately half to one-third of a width of the trenches.