Non-volatile memory cell with charge storage element and method of programming

US7947980B1 · kind B1 · utility

Assignee

• XILINX, INC. · US

Inventors

• Shahin Toutounchi · Pleasanton, US
• James Karp · Saratoga, US
• Jeongheon Jeong · Palo Alto, US
• Michael G. Ahrens · Sunnyvale, US
• Michael J. Hart · Palo Alto, US

Key dates

• Filing date: Apr 29, 2009
• Grant date: May 24, 2011
• Expiry date: Jun 20, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B20/25

Abstract

An MOS transistor is programmed in a non-volatile memory cell. A storage capacitor in the non-volatile memory cell is used to enhance programming efficiency by providing additional charge to the programming terminal of the MOS transistor during breakdown of the gate dielectric, thus avoiding soft programming faults. In a particular embodiment the storage capacitor is a second MOS transistor having a thicker gate dielectric layer than the dielectric layer of the programmable MOS transistor.