Decreasing the etch rate of silicon nitride by carbon addition
US7951730B2 · kind B2 · utility
3Cited by
75References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2009 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Feb 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.