Method of forming an integrated semiconductor device and structure therefor
US7955941B2 · kind B2 · utility
5Cited by
10References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2008 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Dec 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.