Film formation apparatus and method for semiconductor process
US7959733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2009 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Jul 16, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.