Method for forming a semiconductor device using optical proximity correction for the optical lithography
US7962868B2 · kind B2 · utility
3Cited by
18References
20Claims
0Family size
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Key dates
| Filing date | Oct 28, 2005 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Mar 18, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a semiconductor device includes performing a first optimization of a first edge location of a feature fragment, wherein the first optimization has a first speed per fragment, and performing a second optimization of a second edge location of the feature fragment, wherein the second optimization has a second speed per fragment that is slower than the first speed per fragment. Next, a result of the second optimization is used to form a reticle pattern; and a layer on a semiconductor wafer is patterned using the reticle pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.