Film formation method and apparatus for semiconductor process
US7964241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2007 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Oct 16, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/152
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.