Atomic layer deposition of tungsten materials
US7964505B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2008 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Mar 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.