Transistor with immersed contacts and methods of forming thereof

US7968394B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Marius Orlowski · Meylan, FR
• James D. Burnett · Austin, US

Key dates

• Filing date: Dec 16, 2005
• Grant date: Jun 28, 2011
• Expiry date: Apr 24, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

A method includes forming a semiconductor structure, the semiconductor structure includes a first current electrode region, a second current electrode region, and a channel region, the channel region is located between the first current electrode region and the second current electrode region, wherein the channel region is located in a fin structure of the semiconductor structure, wherein a carrier transport in the channel region is generally in a horizontal direction between the first current electrode region and the second current electrode region. The method further includes forming a first contact, wherein forming the first contact includes removing a first portion of the semiconductor structure to form an opening, wherein the opening is in the first current electrode region and forming contact material in the opening.