Method of forming a semiconductor layer

US7972922B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Hunter J. Martinez · Austin, US
• John J. Hackenberg · West Melbourne, US
• Jill C. Hildreth · Slingerlands, US
• Ross E. Noble · Austin, US

Key dates

• Filing date: Nov 21, 2008
• Grant date: Jul 5, 2011
• Expiry date: Apr 23, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method of forming a semiconductor layer, which in one embodiment is part of a photodetector, includes forming a silicon shape, applying ozonated water, removing the first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing germanium. The silicon shape has a top surface that is exposed. The ozonated water is applied to the top surface and causes formation of a first oxide layer on the top surface. The germanium is grown on the top surface.