Patent · US Active

Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium

US7972971B2 · kind B2 · utility

2Cited by

5References

20Claims

0Family size

Assignees

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
STMicroelectronics SA

Inventors

Jean-Francois Damlencourt · Laval, FR
Yves Morand · Grenoble, FR
Laurent Clavelier · Grenoble, FR

Key dates

Filing date	Jun 11, 2007
Grant date	Jul 5, 2011
Priority date	—
Expiry date	Mar 10, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The disclosure relates to a method for producing a microelectronic device including a plurality of Si1-yGey based semi-conducting zones (where 0<y≦1) which have different respective Germanium contents, comprising the steps of:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.