III-nitride semiconductor device
US7973304B2 · kind B2 · utility
4Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2007 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Mar 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.