High resolution wafer inspection system

US7973919B2 · kind B2 · utility

Assignee

• Applied Materials Israel Ltd. · IL

Inventors

• Dan Grossman · Herzliya, IL
• Moshe Langer · Nes Ziona, IL
• Roman Kris · Jerusalem, IL
• Silviu Reinhorn · Mevaseret Tsiyon, IL
• Ron Naftali · Shoham, IL
• Haim Feldman · Yafia, IL

Key dates

• Filing date: Apr 1, 2010
• Grant date: Jul 5, 2011
• Expiry date: Apr 1, 2030

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N2021/1719
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method for inspecting a region, including irradiating the region via an optical system with a pump beam at a pump wavelength. A probe beam at a probe wavelength irradiates the region so as to generate returning probe beam radiation from the region. The beams are scanned across the region at a scan rate. A detector receives the returning probe radiation, and forms an image of the region that corresponds to a resolution better than pump and probe Abbe limits of the optical system. Roles of the pump and probe beams may be alternated, and a modulation frequency of the pump beam may be changed, to produce more information. Information extracted from the probe signal can also differentiate between different materials on the region.