Non-volatile resistive-switching memories formed using anodization
US7977152B2 · kind B2 · utility
6Cited by
13References
7Claims
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Key dates
| Filing date | May 8, 2009 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jul 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.