Configuration of high-voltage semiconductor power device to achieve three dimensional charge coupling

US7977740B2 · kind B2 · utility

Assignee

• Alpha and Omega Semiconductor, Ltd. · US

Inventors

• Francois Hebert · San Mateo, US
• Tao Feng · Santa Clara, US

Key dates

• Filing date: Feb 24, 2010
• Grant date: Jul 12, 2011
• Expiry date: Feb 24, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/441

Abstract

This invention discloses semiconductor device that includes a top region and a bottom region with an intermediate region disposed between said top region and said bottom region with a controllable current path traversing through the intermediate region. The semiconductor device further includes a trench with padded with insulation layer on sidewalls extended from the top region through the intermediate region toward the bottom region wherein the trench includes randomly and substantially uniformly distributed nano-nodules as charge-islands in contact with a drain region below the trench for electrically coupling with the intermediate region for continuously and uniformly distributing a voltage drop through the current path.