Manufacturing method for a semi-conductor on insulator substrate comprising a localised Ge enriched step
US7989327B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2008 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Aug 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semi-conductor on insulator substrate from an SOI substrate, wherein a Si1-xGex layer is formed on a superficial layer of silicon having a buried electrical insulating layer. A silicon oxide layer is formed on the Si1-xGex layer. The resulting stack of silicon, Si1-xGex and silicon oxide layers is etched up to the buried insulating layer leaving an island of the stack, or up to the superficial layer leaving a zone of silicon and an island of the stack. A mask is formed to protect against oxidation on the etched structure, wherein the protective mask only leaves visible the silicon oxide layer of the island. The germanium of the Si1-xGex layer is condensed on the island to obtain an island comprising a layer that is enriched in germanium, or even a layer of germanium, on the insulating layer, with a silicon oxide layer on top of it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.