Patterning method
US7989354B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2008 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Jun 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.