Plasma oxidation processing method
US7989364B2 · kind B2 · utility
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1References
14Claims
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Key dates
| Filing date | Aug 27, 2007 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Dec 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012 [cm−3] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(1D2) radical density in the plasma is measured by a VUV monochromator 63, and a correction is made to the plasma process conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.