Interconnects with improved electromigration reliability
US7989956B1 · kind B1 · utility
4Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2004 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Sep 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure in a semiconductor device may be formed to include a number of segments. Each segment may include a first metal. A barrier structure may be located between the plurality of segments to enable the interconnect structure to avoid electromigration problems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.