Patent · US Active

Heterogeneous substrate including a sacrificial layer, and a method of fabricating it

US7993949B2 · kind B2 · utility

3Cited by

2References

11Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Francois Perruchot · Issy-les-Moulineaux, FR
Bernard Diem · Échirolles, FR
Vincent Larrey · La Murette, FR
Laurent Clavelier · Grenoble, FR
Emmanuel Defay · Saint-Égrève, FR

Key dates

Filing date	Jun 22, 2009
Grant date	Aug 9, 2011
Priority date	—
Expiry date	Sep 12, 2029

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/014
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.