Semiconductor device with recording layer containing indium, germanium, antimony and tellurium
US8000126B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2007 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Aug 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
Abstract
A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.