Semiconductor structure and method for making the same
US8003528B2 · kind B2 · utility
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12References
10Claims
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Key dates
| Filing date | Jun 15, 2010 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Jul 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor structure is provided. The method includes providing a substrate; forming a dielectric layer on the substrate; forming a conductor pattern on a main surface of the dielectric layer, the conductor pattern having a top surface and sidewalls; and performing a selective atomic layer deposition (ALD) process to selectively deposit a conformal metal layer onto the top surface and sidewalls of the conductor pattern, but without depositing onto the main surface of the dielectric layer substantially.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.