ALD processing techniques for forming non-volatile resistive-switching memories

US8008096B2 · kind B2 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventors

• Nobi Fuchigami · Santa Clara, US
• Pragati Kumar · Santa Clara, US
• Prashant B. Phatak · San Jose, US

Key dates

• Filing date: Jun 4, 2009
• Grant date: Aug 30, 2011
• Expiry date: Dec 5, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/20

Abstract

ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using a purge duration of less than 20 seconds, and forming a second electrode over the at least one metal oxide layer.