Semiconductor device having vertical electrodes structure
US8008749B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2005 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Jan 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/20
Abstract
A semiconductor device is provided with a drain electrode 22, a semiconductor base plate 32, an electric current regulation layer 42 covering a part of a surface of the semiconductor base plate 32 and leaving a non-covered surface 55 at the surface of the semiconductor base plate 32, a semiconductor layer 50 covering a surface of the electric current regulation layer 42, and a source electrode 62 formed at a surface of the semiconductor layer 50. A drift region 56, a channel forming region 54, and a source region 52 are formed within the semiconductor layer 50. The drain electrode 22 is connected to a first terminal of a power source, and the source electrode 62 is connected to a second terminal of the power source. With this semiconductor layer 50, it is possible to increase withstand voltage or reduce the occurrence of current leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.