Optimal rasterization for maskless lithography
US8009269B2 · kind B2 · utility
2Cited by
21References
21Claims
0Family size
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Key dates
| Filing date | Mar 14, 2007 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Aug 19, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70475
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lithographic system is provided in which an extent of overlap between pattern sections is adjusted in order to match a size of a pattern section to a size of a repeating portion of the pattern to be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.