Grid-based fragmentation for optical proximity correction in photolithography mask applications
US8010915B2 · kind B2 · utility
4Cited by
8References
20Claims
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Key dates
| Filing date | Jul 10, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Nov 11, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical proximity correction (OPC) method for photolithography applications can be utilized to reduce the processing time, cost, and post-OPC file size associated with conventional methods. The OPC method provides a target layout pattern that represents a corresponding mask pattern for a photolithography mask, and aligns the target layout pattern relative to a suitably dimensioned fragmentation grid. Then, at least one feature of the target layout pattern is fragmented using the fragmentation grid. Thereafter, a fragment data set is generated in response to the grid-based fragmentation of the target layout pattern.
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