Ultra-thin SOI CMOS with raised epitaxial source and drain and embedded SiGe PFET extension

US8012820B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• Advanced Micro Devices, Inc. · US

Inventors

• Amlan Majumdar · White Plains, US
• Gen Pei · Yorktown Heights, US
• Zhibin Ren · Hopewell Junction, US
• Dinkar Singh · White Plains, US
• Jeffrey W. Sleight · Ridgefield, US

Key dates

• Filing date: Mar 21, 2011
• Grant date: Sep 6, 2011
• Expiry date: Mar 21, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A method for improving channel carrier mobility in ultra-thin Silicon-on-oxide (UTSOI) FET devices by integrating an embedded pFET SiGe extension with raised source/drain regions. The method includes selectively growing embedded SiGe (eSiGe) extensions in pFET regions and forming strain-free raised Si or SiGe source/drain (RSD) regions on CMOS. The eSiGe extension regions enhance hole mobility in the pFET channels and reduce resistance in the pFET extensions. The strain-free raised source/drain regions reduce contact resistance in both UTSOI pFETs and nFETs.