Optimized halo or pocket cold implants
US8012843B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2010 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Aug 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of performing pocket or halo implants is disclosed. The amount of damage and defects created by the halo implant degrades the performance of the semiconductor device, by increasing leakage current, decreasing the noise margin and increasing the minimum gate voltage. The halo or packet implant is performed at cold temperature, which decreases the damage caused to the crystalline structure and improves the amorphization of the crystal. The use of cold temperature also allows the use of lighter elements for the halo implant, such as boron or phosphorus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.