Precursor addition to silicon oxide CVD for improved low temperature gapfill
US8012887B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2009 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Nov 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.