Patent · US Active

Power semiconductor device in lead frame employing connecting element with conductive film

US8013441B2 · kind B2 · utility

5Cited by

10References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Bauer · Nittendorf, DE
Alfred Haimerl · Sinzing, DE
Angela Kessler · Regensburg, DE
Joachim Mahler · Regensburg, DE
Wolfgang Schober · Amberg, DE

Key dates

Filing date	Oct 16, 2006
Grant date	Sep 6, 2011
Priority date	—
Expiry date	Jul 26, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One aspect of the invention relates to a power semiconductor device in lead frame technology and a method for producing the same. The power semiconductor device has a vertical current path through a power semiconductor chip. The power semiconductor chip has at least one large-area electrode on its top side and a large-area electrode on its rear side. The rear side electrode is surface-mounted on a lead frame chip island of a lead frame and the top side electrode is electrically connected to an internal lead of the lead frame via a connecting element. The connecting element has an electrically conductive film on a surface facing the top side electrode, the electrically conductive film extending from the top side electrode to the internal lead.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.