Dielectric breakdown lifetime enhancement using alternating current (AC) capacitance
US8022716B2 · kind B2 · utility
1Cited by
9References
19Claims
0Family size
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Key dates
| Filing date | Jul 21, 2009 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Nov 27, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2623
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A time-to-breakdown for a dielectric layer in a semiconductor device is determined based upon a sudden change in capacitance. An alternating voltage, greater in magnitude than an operating voltage of the device, is applied to the semiconductor device, capacitance is measured across the dielectric layer during the application of the voltage until a sudden change in capacitance occurs, thereby indicating a breakdown in the dielectric layer, and the breakdown time is scaled to the operating voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.