Method to form high density phase change memory (PCM) top contact every two bits

US8030128B1 · kind B1 · utility

Assignee

• Marvell International Ltd. · BM

Inventors

• Pantas Sutardja · Los Gatos, US
• Albert Wu · Taipei, TW
• Runzi Chang · San Jose, US
• Chien-Chuan Wei · Los Gatos, US
• Winston Lee · Palo Alto, US
• Peter Wung Lee · Saratoga, US

Key dates

• Filing date: Apr 16, 2008
• Grant date: Oct 4, 2011
• Expiry date: Nov 13, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

Embodiments of the present invention provide a method that includes providing a substrate including an emitter layer comprising a plurality of emitters, each emitter defining an axis, forming a heater layer above the emitter layer, and forming a phase change memory (PCM) cell layer above the heater layer. The method also includes forming a top contact layer above the PCM cell layer. The top contact layer comprises a plurality of top contacts, where each top contact is located between two axes. Other embodiments are also described.