Film formation method and apparatus for forming silicon-containing insulating film doped with metal
US8034673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2009 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Nov 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.